Meanwhile, a new 48-layer cell technology development by Toshiba could pave the way for higher write speeds, more reliability and lower costs in solid state drives.
The flash memory inside our phones, tablets and SSDs is getting faster, cheaper and more capable every year, but there is a limit to how much data we can pack inside a given area of silicon, and current technology is already pushing that limit. To keep the trend going, manufacturers are needing to move two-dimensional memory cells into the third dimension.
It’s all about electrons. Each memory cell stores bits by retaining a set amount of charge, which relates to the number of electrons that are “trapped” inside that cell. As cells get smaller, fewer and fewer electrons are stored in each cell, and this makes cells much more prone to errors.
Source Article from https://www.freedomsphoenix.com/News/173462-2015-03-31-3d-flash-technology-moves-forward-with-10-tb-ssds-and.htm?EdNo=001&From=RSS
3D flash technology moves forward with 10 TB SSDs and the first 48-layer memory cells
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